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Results 1 to 25 of 33

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Development and validation of a 3D computational tool to describe concrete behaviour at mesoscale. Application to the alkali-silica reactionCOMBY-PEYROT, Isabelle; BERNARD, Fabrice; BOUCHARD, Pierre-Olivier et al.Computational materials science. 2009, Vol 46, Num 4, pp 1163-1177, issn 0927-0256, 15 p.Article

Atomistic study of small helium bubbles in plutoniumAO, B. Y; WANG, X. L; HU, W. Y et al.Journal of alloys and compounds. 2007, Vol 444-445, pp 300-304, issn 0925-8388, 5 p.Conference Paper

Effect of low energy helium irradiation on mechanical properties of 304 stainless steelKAWAKAMI, T; TOKUNAGA, K; YOSHIDA, N et al.Fusion engineering and design. 2006, Vol 81, Num 1-7, pp 335-340, issn 0920-3796, 6 p.Conference Paper

Laser-induced thermomigration of Te precipitates in CdZnTe crystalsMEIER, Michael; HARRISON, Mark J; SPALSBURY, Steven et al.Journal of crystal growth. 2009, Vol 311, Num 17, pp 4247-4250, issn 0022-0248, 4 p.Article

Luminescence spectra of chromium-doped LiGaO2 crystals as indicator of their phase heterogeneityMEYLMAN, Mikhail L.Optical materials (Amsterdam). 2006, Vol 28, Num 3, pp 221-224, issn 0925-3467, 4 p.Article

Infrared analysis of the precipitated oxide phase in silicon and germaniumDE GRYSE, O; VANMEERBEEK, P; VANHELLEMONT, J et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 113-116, issn 0921-4526, 4 p.Conference Paper

A bottom-up multiscale view of point-defect aggregation in siliconSINNO, Talid.Journal of crystal growth. 2007, Vol 303, Num 1, pp 5-11, issn 0022-0248, 7 p.Conference Paper

Liquid nucleation of surface-free crystal from nanovoidsLI, H; WEN, Z; JIANG, Q et al.Solid state communications. 2008, Vol 147, Num 7-8, pp 250-253, issn 0038-1098, 4 p.Article

Thermal evolution of defects produced by implantation of H, D and He in SiliconSIMPSON, P. J; KNIGHTS, A. P; CHICOINE, M et al.Applied surface science. 2008, Vol 255, Num 1, pp 63-67, issn 0169-4332, 5 p.Article

Vapour phase growth of epitaxial silicon carbide layersWAGNER, G; SCHULZ, D; SICHE, D et al.Progress in crystal growth and characterization of materials. 2003, Vol 47, Num 2-3, pp 139-165, issn 0960-8974, 27 p.Article

Development of nano-fabrication technique utilizing self-organizational behavior of point defects induced by ion irradiationNITTA, Noriko; TANIWAKI, Masafumi.Physica. B, Condensed matter. 2006, Vol 376-77, pp 872-876, issn 0921-4526, 5 p.Conference Paper

Annealing effects on structure in amorphous Al2O3modelsVO VAN HOANG; SUHK KUN OH.Physica. B, Condensed matter. 2005, Vol 364, Num 1-4, pp 225-232, issn 0921-4526, 8 p.Article

Piezoresponse force microscopy for piezoelectric measurements of III-nitride materialsRODRIGUEZ, B. J; GRUVERMAN, A; KINGON, A. I et al.Journal of crystal growth. 2002, Vol 246, Num 3-4, pp 252-258, issn 0022-0248, 7 p.Conference Paper

KIRKENDALL voids in the intermetallic layers of solder joints in MEMSWEINBERG, Kerstin; BÖHME, Thomas; MÜLLER, Wolfgang H et al.Computational materials science. 2009, Vol 45, Num 3, pp 827-831, issn 0927-0256, 5 p.Conference Paper

A constitutive model for casting magnesium alloy ZL101 based on the analysis of spherical void evolutionCHEN, B; PENG, X. H; FAN, J. H et al.Computational materials science. 2008, Vol 44, Num 1, pp 190-194, issn 0927-0256, 5 p.Conference Paper

Cellular structure formed by ion-implantation-induced point defectNITTA, N; TANIWAKI, M; HAYASHI, Y et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 881-885, issn 0921-4526, 5 p.Conference Paper

Oxygen precipitation and improved internal gettering in heavily As-doped silicon crystalQIUYAN HAO; CAICHI LIU; HONGDI ZHANG et al.Materials science in semiconductor processing. 2006, Vol 9, Num 1-3, pp 88-91, issn 1369-8001, 4 p.Conference Paper

Secondary phase inclusions in polycrystalline sheet siliconJINGGANG LU; ROZGONYI, George; RAND, James et al.Journal of crystal growth. 2004, Vol 269, Num 2-4, pp 599-605, issn 0022-0248, 7 p.Article

Effect of alloy composition on track formation in relaxed Si1-xGexGAIDUK, P. I; TRAUTMANN, C; TOULEMONDE, M et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 808-812, issn 0921-4526, 5 p.Conference Paper

Molecular dynamics study on the nano-void growth in face-centered cubic single crystal copperZHAO, K. J; CHEN, C. Q; SHEN, Y. P et al.Computational materials science. 2009, Vol 46, Num 3, pp 749-754, issn 0927-0256, 6 p.Conference Paper

Study of the gas inclusions in Al2O3/Y3Al5O12 and Al2O3/Y3Al5O12/ZrO2 eutectic fibers grown by laser floating zoneOLIETE, Patricia B; PENA, José I.Journal of crystal growth. 2007, Vol 304, Num 2, pp 514-519, issn 0022-0248, 6 p.Article

Modeling of inclusions with interphases in heterogeneous material using the infinite element methodLIU, D. S; CHIOU, D. Y.Computational materials science. 2004, Vol 31, Num 3-4, pp 405-420, issn 0927-0256, 16 p.Article

Effect of radiation-induced emission of Schottky defects on the formation of colloids in alkali halidesDUBINKO, V. I; VAINSHTEIN, D. I; DEN HARTOG, H. W et al.Radiation effects and defects in solids. 2003, Vol 158, Num 10, pp 705-719, issn 1042-0150, 15 p.Article

Solid state recrystallization: a promising technique for the growth of semiconductor materialsTRIBOULET, R.Crystal research and technology (1979). 2003, Vol 38, Num 3-5, pp 215-224, issn 0232-1300, 10 p.Conference Paper

Cell model simulation of void growth in nodular cast iron under cyclic loadingRABOLD, F; KUNA, M.Computational materials science. 2005, Vol 32, Num 3-4, pp 489-497, issn 0927-0256, 9 p.Conference Paper

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